3-dimensional integrated circuit architecture, structure and method for fabrication thereof

ABSTRACT

An integrated circuit design, structure and method for fabrication Thereof includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.

BACKGROUND

1. Field of the Invention

The invention relates generally to integrated circuit architectures(i.e., designs), and related integrated circuit structures and methodsfor fabrication thereof. More particularly, the invention relates toenhanced performance integrated circuit architectures, and relatedintegrated circuit structures and methods for fabrication thereof.

2. Description of the Related Art

Modern semiconductor circuits often integrate circuit types orcomponents, such as transistors, resistors and capacitors, for whichdifferent types of performance characteristics are desirably optimized.For example, field effect transistors that are used within logiccircuits may desirably be optimized to provide enhanced integratedcircuit speed. In comparison, storage capacitors used in dynamic memorycircuits may alternatively be optimized to provide enhanced chargestorage capacity.

The optimization of performance characteristics of various semiconductorcircuits and semiconductor devices often leads to competing processingrequirements. Thus, a need exists for integrated circuit designs andresulting structures that efficiently allow for optimization of variousintegrated circuit and device types.

Semiconductor structures, and methods for fabrication thereof, thatinclude individually optimized devices and components are known in thesemiconductor fabrication art. For example, Chan et al., in U.S. Pat.No. 6,821,826, teaches a three-dimensional complementary metal oxidesemiconductor (CMOS) structure having separate field effect transistor(FET) devices fabricated upon different crystallographic orientationsemiconductor substrates. The different crystallographic orientationsprovide for optimization of charge carrier mobility within the separatefield effect transistors.

Semiconductor circuit fabrication is certain to continue to requireenhanced levels of performance and optimization of various semiconductorcircuits and devices within reduced semiconductor substrate surfacearea. Thus, integrated circuit and semiconductor architectures,structures and methods for fabrication thereof that provide for suchready optimization are desirable.

SUMMARY OF THE INVENTION

The invention provides an integrated circuit architecture (i.e., adesign), a related integrated circuit structure and a related method forfabricating the integrated circuit structure.

Each of the architecture, structure and method includes: (1) a firstmemory array disposed, located or formed upon a first substrate layerand having a first performance and power specification; (2) a secondmemory array different from the first memory array and disposed, locatedor formed upon a second substrate layer different from the firstsubstrate layer and having a second power and performance specificationdifferent from the first power and performance specification; and (3) aplurality of logic circuit elements disposed, located or formed upon athird substrate layer coupled to the first memory array and the secondmemory array. The foregoing dispositions of the first memory array,second memory array and plurality of logic elements upon separatesubstrate layers allows for individual optimization of the devices orcircuits that comprise the first memory array, the second memory arrayand the plurality of logic circuit elements.

More specifically, an integrated circuit architecture in accordance withthe invention includes a first array of first memory devices disposed ona first substrate layer, where the first memory devices have a firstpower and performance specification. The integrated circuit architecturealso includes a second array of second memory devices different from thefirst array disposed on a second substrate layer different from thefirst substrate layer, where the second memory devices have a secondpower and performance specification different from the first power andperformance specification. The integrated circuit architecture alsoincludes a plurality of logic devices disposed on a third substratelayer, where the plurality of logic devices is coupled to the firstarray and the second array.

An integrated circuit structure in accordance with the inventioncorrelates with the integrated circuit architecture. The integratedcircuit structure includes a first array of first memory devices locatedon a first substrate layer, where the first memory devices have a firstpower and performance specification. The integrated circuit structurealso includes a second array of second memory devices different from thefirst array located on a second substrate layer different from the firstsubstrate layer, where the second memory devices have a second power andperformance specification different from the first power and performancespecification. The integrated circuit structure also includes aplurality of logic devices located on a third substrate layer, where theplurality of logic devices is coupled to the first array and the secondarray.

A method for fabricating an integrated circuit in accordance with theinvention includes forming a first array of first memory devices on afirst substrate layer, where the first memory devices have a first powerand performance specification. The method also includes forming a secondarray of second memory devices different from the first array on asecond substrate layer different from the first substrate layer, wherethe second memory devices have a second power and performancespecification different from the first power and performancespecification. The method also includes forming a plurality of logicdevices on a third substrate layer. Finally, the method includescoupling the first array, the second array and the plurality of logicdevices.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects, features and advantages of the invention are understoodwithin the context of the Description of the Preferred Embodiments, asset forth below. The Description of the Preferred Embodiments isunderstood within the context of the accompanying drawings, which form amaterial part of this disclosure, wherein:

FIG. 1 and FIG. 2 show a pair of schematic diagrams illustrating anintegrated circuit architecture in accordance with the invention.

FIG. 3 to FIG. 7 show a series of schematic cross-sectional diagramsillustrating the results of progressive stages of implementing theintegrated circuit architecture of FIG. 1 and FIG. 2 within the contextof an integrated circuit structure.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments and the invention, which include an integrated circuitarchitecture, a related integrated circuit structure and a relatedmethod for fabrication thereof, are described in greater detail belowwithin the context of the drawings described above. The drawings areintended for illustrative purposes, and as such they are not necessarilydrawn to scale.

FIG. 1 shows a schematic diagram of an integrated circuit architecturethat comprises an aspect and embodiment of the invention.

The integrated circuit architecture first comprises a logic device layerLDL (i.e., at least one logic device layer). The logic device layer LDLis intended to comprise a substrate or a substrate layer that includeslogic devices located, disposed and formed therein. Logic devices aretypically transistors, more typically field effect transistors. However,the invention is not limited to a logic device layer LDL that comprisesonly field effect transistors. Rather, other types of logic devices,including in particular bipolar transistors and bipolar-complementarymetal oxide semiconductor (BiCMOS) transistors, are not excluded withinthe context of the instant embodiment or within the context of theinvention.

The embodiment and the invention contemplate that the substrate for thelogic device layer LDL will typically be a semiconductor substrate or asemiconductor layer, although the same is also not a requirement of theinvention. Rather the embodiment and the invention also contemplate useof dielectric substrates when fabricating logic devices thereupon toform a logic device layer LDL. Within the context of the foregoingcircumstances, the logic devices may be thin film logic devices located,disposed and formed upon dielectric substrates.

The embodiment and the invention also contemplate that memory arrays maybe embedded within the logic device layer LDL. These memory arrays willof necessity utilize higher performance logic technology that isdescribed above and optimized for high speed support functions of arrayperipherals within the logic device layer LDL (i.e., a different powerand performance specification than memory arrays described below). Thishigher performance logic technology would generally, if not necessarily,utilize higher performance logic technology that may compromiseperformance (i.e., cell stability and related parameters) of a memoryarray.

Located architecturally (but not necessarily physically) above the logicdevice layer LDL within the schematic diagram of FIG. 1 is a series ofmemory arrays MA1, MA2, MA3 and MAn. Each of the memory arrays MA1, MA2,MA3 and MAn is intended as comprising a single type of memory devicelocated, disposed and formed on a substrate or a substrate layer that isseparate from an other of the memory arrays MA1. MA2, MA3 or MAn, or thelogic device layer LDL.

Non-limiting examples of individual memory device types contemplated bythe embodiment and the invention include dynamic random access memory(DRAM) devices, synchronous random access memory (SRAM) devices,magnetic random access memory (MRAM) devices, flash memory devices,other volatile memory devices and other non-volatile memory devices.Analogously with the logic devices located, disposed and formed withinthe logic device layer LDL, the memory devices located, disposed andformed within the memory array layers MA1, MA2, MA3 and MAn are alsooptimized with respect to at least one operational parameter or physicalparameter.

For example, for a DRAM device the operational parameter might be anadequate storage capacitance. Alternatively, a refresh rate might alsobe an appropriate operational parameter for a DRAM device. An SRAMdevice might alternatively benefit from enhanced noise immunity and cellstability. In comparison, logic devices will generally benefit fromenhanced speed, which is often realized within the context of a minimumresolvable channel width.

FIG. 1 also shows two pair of bitlines comprising one left bitline BLLand one right bitline BLR that are used to couple and connect the memoryarrays MA1, MA2, MA3 and MAn with the logic device layer LDL. Typically,the embodiment and the invention intend that the memory arrays MA1, MA2,MA3 and MAn and the logic device layer LDL comprise a stack of layers orsubstrates, and in particular an aligned stack of layers or substrates.

FIG. 2 shows an expanded view of an interface between the logic devicelayer LDL and the memory array MA1. FIG. 2 in particular shows thatarray sense amplifier (ASA) (including memory array output drivers) fora specific memory technology that is fabricated within the first memoryarray MA1 is located within the logic device layer LDL rather than thefirst memory array MA1. In certain other integrated circuitarchitectures such array sense amplifiers are located embedded withinthe memory array whose stored data it is intended to amplify.

Although not specifically illustrated in FIG. 1 or FIG. 2, theembodiment and the invention also at least implicitly assume that thelogic device layer LDL and each of the memory arrays MA1, MA2, MA3 andMAn may be powered by a unique and distinct operating voltage andoperating current (i.e., unique power supplies). Each of the unique anddistinct operating voltages and operating currents may clearly also beoptimized with respect to individual devices and device types withineach of the specific memory arrays MA1, MA2, MA3 or MAn, or the logicdevice layer LDL.

Methods for fabricating an integrated circuit structure, or moreparticularly a semiconductor structure, in accordance with the foregoingintegrated circuit architecture may derive from methods that areotherwise generally known in the integrated circuit fabrication art orthe semiconductor fabrication art.

Commonly, although not exclusively, the methods comprise layer transfermethods that use a substrate as a means for transferring eitherpartially or fully fabricated integrated circuit layers and laminatingthe same in a stack type structure. Specific examples of resultingstructures and related methods are taught within: (1) Hayashi in U.S.Pat. No. 5,087,585 (a thin film layering method); (2) Finilla in U.S.Pat. No. 5,426,072 (a layering method that uses silicon-on-insulator(SOI) substrates); (3) Ramm et al., in U.S. Pat. No. 5,877,034 (a methodthat utilizes lateral placement of fabricated chips); (4) Matsushita inU.S. Pat. No. 5,998,808 (a method that includes sequential bonding ofmonocrystalline silicon layers having devices formed therein); and (5)Chan et al., in U.S. Pat. No. 6,821,826 (a method that includeslaminating of semiconductor layers of different crystallographicorientation). The teachings of the foregoing references are incorporatedherein fully by reference.

An illustrative example of a method for fabricating an integratedcircuit structure in accordance with the invention is shown by theschematic cross-sectional diagrams of FIG. 3 to FIG. 7.

FIG. 3 shows an integrated circuit structure that comprises a substrate10 and a first performance layer 11 located thereupon. The firstperformance layer 11 further comprises a first dielectric spacer layer11 a, a first device layer 11 b located thereupon and a first dielectricisolated interconnect layer 11 c located thereupon.

Each of the foregoing substrate 10 and layers 11/11 a/11 b/11 c maycomprise materials and have dimensions that are conventional in theintegrated circuit fabrication art. Each of the foregoing substrate 10and layers 11/11 a/11 b/11 c may also be formed using methods that areconventional in the integrated circuit fabrication art.

The substrate 10 may comprise a conductor material, a semiconductormaterial or a dielectric material. Conductor materials are notparticularly common. Dielectric materials may include certain ceramicmaterials as well as glasses. Silica, alumina, titania and zirconiamaterials are common, as well as laminates thereof and compositesthereof.

More commonly, the substrate comprises a semiconductor material.Semiconductor materials may include, but are not limited to: silicon,germanium, silicon-germanium alloy, silicon carbide andsilicon-germanium carbide alloy semiconductor materials. In addition,semiconductor materials may also include compound (II-VI and III-V)semiconductor materials of which gallium arsenide, indium arsenide andindium phosphide are non-limiting examples.

The structural aspects and embodiment of the invention contemplate theuse of bulk semiconductor substrates, semiconductor-on-insulatorsubstrates and hybrid orientation substrates. Semiconductor-on-insulatorsubstrates comprise a base semiconductor substrate, a buried dielectriclayer located thereupon and a surface semiconductor layer locatedfurther thereupon. Hybrid orientation substrates include multiplesemiconductor regions of different crystallographic orientation.

Typically, the substrate 10, whether comprising a semiconductor materialor an alternative material, has a thickness from about 1 to about 3mils.

The first dielectric spacer layer 11 a may comprise any of severaldielectric materials. Non-limiting examples include oxides, nitrides andoxynitrides of silicon, which generally have a dielectric constant fromabout 4 to about 20, measured in vacuum. Oxides, nitrides andoxynitrides of other elements are not excluded. Also included aregenerally lower dielectric constant dielectric materials having adielectric constant from about 2 to about 4, also measured in vacuum.Dielectric materials with dielectric constants in this range maycomprise aerogels, hydrogels, fluorine doped dielectric materials,carbon doped dielectric materials, spin-on-glass materials, organicpolymer materials and fluorinated organic polymer materials.

The first dielectric spacer layer 11 a may be formed using any ofseveral methods that are appropriate to its material {s} of fabrication.Non-limiting examples include thermal or plasma oxidation or nitridationmethods, spin-on methods, chemical vapor deposition methods and physicalvapor deposition methods. Typically, the first dielectric spacer layer11 a comprises at least in part a silicon oxide material. In addition,the first dielectric spacer layer 11 a typically has a thickness fromabout 100 to about 10000 angstroms.

The first device layer 11 b generally comprises semiconductor devicesthat are located, disposed and formed within a semiconductor layer. Theinvention is not however so limited. The first device layer 11 b maycomprise a semiconductor material that is either the same or differentfrom the semiconductor material from which may be comprised thesubstrate 10. The first device layer 11 b may be either the same ordifferent with respect to semiconductor composition, crystallographicorientation and dopant concentration. Typically the first device layer11 b has semiconductor devices located therein that are optimized inaccordance with the architectural aspects and embodiment of theinvention. The semiconductor devices may include, but are not limitedto: transistors, resistors, diodes and capacitors.

The first dielectric isolated interconnect layer 11 c may comprisegenerally conventional or generally unconventional metallizationmaterials and dielectric materials. Generally conventional metallizationmaterials include non-refractory and refractory metals and metal alloys,such as, but not limited to: aluminum, copper, tungsten, titanium,tantalum and vanadium. Also included are appropriate nitrides andsilicides that need not necessarily derive from the foregoing metals andmetal alloys.

Dielectric materials may include the same dielectric materials fromwhich may be comprised the first dielectric spacer layer 11 a.Typically, the first dielectric isolated interconnect layer 11 c has athickness from about 1000 to about 5000 angstroms.

FIG. 4 shows the results of an initial process step that is directedtowards laminating a second performance layer 12 upon the firstperformance layer 11 whose schematic cross-sectional diagram isillustrated in FIG. 3.

As is illustrated in FIG. 4, the second performance layer 12 islaminated, with an inverted ordering, to a carrier substrate 15 thatincludes an adhesive interfacial surface. The carrier substrate 15 maycomprise a conductor material, a semiconductor material or a dielectricmaterial. The adhesive interfacial surface interposed between thecarrier substrate 15 and the second performance layer 12 may compriseany of several adhesive materials. Polymeric adhesive materials areparticularly common, but do not limit the invention.

As is additionally specifically illustrated by sub-layer designations,the integrated circuit structure that is illustrated in FIG. 4 clearlyintends that the second performance layer 12 comprises in upwardlyprogressing order: (1) a second dielectric spacer layer 12 a; (2) asecond device layer 12 b located upon the second dielectric spacer layer12 a; and (3) a second dielectric isolated interconnect layer 12 clocated upon the second device layer 12 b.

FIG. 5 shows the results of a complete laminating of the integratedcircuit structure whose schematic cross-sectional diagram is illustratedin FIG. 4, followed by the subsequent removal of the carrier substrate15 including the adhesive interfacial surface.

The complete laminating is generally undertaken using a pressurelaminating method. Laminating methods that use adhesive materialinterposed between the first performance layer 11 and the secondperformance layer 12 are not excluded. They may be used as an adjunct oran alternative to a pressure laminating method.

The carrier substrate 15 may be delaminated to provide the integratedcircuit structure of FIG. 5 while using any of several methods. Includedare a particularly simple delaminating method that may use a peelingaction. Also contemplated are radiation assisted delamination methodsthat use radiation to assist in release at the interface of the adhesivesurface of the carrier substrate 15 with the second performance layer12.

FIG. 6 shows a schematic cross-sectional diagram illustrating theresults of further processing of the integrated circuit structure whoseschematic cross-sectional diagram is illustrated in FIG. 5.

FIG. 6 shows the results of two additional iterations of the laminatingprocessing that is illustrated in the schematic cross-sectional diagramof FIG. 3, to yield an integrated circuit structure that furthercomprises a third performance layer 13 laminated to the secondperformance layer 12, and a fourth performance layer 14 laminated to thethird performance layer 13.

In concert with the first performance layer 11 and the secondperformance layer 12, the third performance layer 13 comprises: (1) athird dielectric spacer layer 13 a; (2) a third device layer 13 blocated upon the third dielectric spacer layer 13 a; and (3) a thirddielectric isolated interconnect layer 13 c located upon the thirddevice layer 13 b. Similarly, the fourth performance layer 14 comprises:(1) a fourth dielectric spacer layer 14 a; (2) a fourth device layer 14b located upon the fourth dielectric spacer layer 14 a; and (3) a fourthdielectric isolated interconnect layer 14 c located upon the fourthdevice layer 14 b.

FIG. 7 shows the results of further processing of the integrated circuitstructure whose schematic cross-sectional diagram is illustrated in FIG.6.

FIG. 7 shows a left bitline BLL and a right bitline BLR locatedinterconnecting the first performance layer 11, the second performancelayer 12, the third performance layer 13 and the fourth performancelayer 14 through their respective dielectric isolated interconnectionlayers 11 c, 12 c, 13 c and 14 c.

The left bitline BLL and the right bitline BLR may be formed usingmethods that are conventional in the integrated circuit fabrication art,and in particular the semiconductor fabrication art. Such methods willgenerally include forming a via through aligned dielectric layers withinthe fourth, third, second and first performance layers 14/13/12/11 sothat the via exposes portions of dielectric isolated interconnect layers14 a/13 a/12 a/11 a within the corresponding fourth performance layer14, the third performance layer 13, the second performance layer 12 andthe first performance layer 11. The via may then be backfilled with asuitable optional barrier layer and also a conductor layer. Excessportions of the barrier layer and conductor layer that are located uponan upper surface of the integrated circuit structure whose schematiccross-sectional diagram is illustrated in FIG. 7 may be planarized usingmethods that are conventional in the integrated circuit fabrication art.Such methods may include, but are not limited to mechanical planarizingmethods, and chemical mechanical polish planarizing methods. Chemicalmechanical polish planarizing methods are considerably more common.

Within FIG. 7, any one of the first performance layer 11, the secondperformance layer 12, the third performance layer 13 and the fourthperformance layer 14 may comprise a logic device layer LDL in accordancewith the architectural aspect and embodiment of the invention, asillustrated in FIG. 1. Similarly each of the remaining three of thefirst performance layer 11, the second performance layers 12, the thirdperformance layer 13 and the fourth performance layer 14 may compriseany one (i.e., single) of the first memory array MA1, second memoryarray MA2, third memory array MA3 and last memory array MAn.

Thus, the integrated circuit structural aspect and embodiment of theinvention does not discriminate with respect to a location of a logicdevice layer LDL with respect to any one of a first memory array MA1,second memory array MA2, third memory array MA3 or last memory arrayMAn.

From a practical perspective, the integrated circuit structural aspectand embodiment of the invention might find desirable to locate one ofthe logic device layer LDL and the memory arrays MA1, MA2, MA3 and MAnthat is most likely to generate heat closest to a heat sink or otherheat dissipation structure or layer within an integrated circuitstructure. Such a specific location will depend upon further structuralconsiderations within the context of the integrated circuit structurewhose schematic cross-sectional diagram is illustrated in FIG. 7.

The preferred embodiments of the invention are illustrative of theinvention rather than limiting of the invention. Revisions andmodifications may be made to architectures, structures, methods,materials and dimensions of an integrated circuit architecture,structure and method for fabrication thereof in accordance with thepreferred embodiments of the invention, while still providing anembodiment in accordance with the invention, further in accordance withthe accompanying claims.

1. A method for fabricating an integrated circuit comprising: forming afirst array of first memory devices on a first substrate layer, thefirst memory devices having a first power and performance specification;forming a second array of second memory devices different from the firstarray on a second substrate layer different from the first substratelayer, the second memory devices having a second power and performancespecification different from the first power and performancespecification; forming a plurality of logic devices and a plurality ofarray sense-amp and memory array output drivers on a third substratelayer; and coupling the first array, the second array and the pluralityof logic devices.
 2. The method of claim 1 wherein the coupling iseffected using the array sense-amp and memory array output drivers. 3.The method of claim 1 wherein the coupling is effected by stacking thefirst substrate layer, the second substrate layer and the thirdsubstrate layer and connecting the first array the second array and theplurality of logic devices using at least one bitline.
 4. The method ofclaim 1 wherein the first array of first memory devices comprises aseries of devices selected as one from the group consisting of DRAM,SRAM, MRAM, flash memory, other volatile memory and other non-volatilememory devices.
 5. The method of claim 4 wherein the second array ofsecond memory devices comprises an other series of devices selected asanother from the group consisting of DRAM, SRAM, MRAM, flash memory,other volatile memory and other non-volatile memory devices.